December 7, 2016
FTEEE1629-A-ZVS-Pulse-width-Modulation-Full-Bridge-Converter-With-a-Low-RMS-Current-Resonant-Auxiliary-Circuit-IEEE-EEE-Project-2016-2017

FTEEE-1629 A ZVS Pulse width Modulation Full-Bridge Converter With a Low-RMS-Current Resonant Auxiliary Circuit – IEEE EEE Project 2016 – 2017

FTEEE-1629 A ZVS Pulse width Modulation Full-Bridge Converter With a Low-RMS-Current Resonant Auxiliary Circuit – IEEE EEE Project 2016 – 2017  ABSTRACT: The description and analysis of […]
December 7, 2016
FTV1640 Source Code Error Detection in High-Level Synthesis Functional Verification- IEEE VLSI Project 2016 - 2017

FTV1640 Source Code Error Detection in High-Level Synthesis Functional Verification- IEEE VLSI Project 2016 – 2017

FTV1640 Source Code Error Detection in High-Level Synthesis Functional Verification-  IEEE VLSI Project 2016 – 2017 ABSTRACT: A dynamic functional verification method that compares untimed simulations […]
December 7, 2016
FTV1645 A 0.1–3.5-GHz Duty-Cycle Measurement and Correction Technique in 130-nm CMOS- IEEE VLSI Project 2016 - 2017

FTV1645 A 0.1–3.5-GHz Duty-Cycle Measurement and Correction Technique in 130-nm CMOS- IEEE VLSI Project 2016 – 2017

FTV1645 A 0.1–3.5-GHz Duty-Cycle Measurement and Correction Technique in 130-nm CMOS-  IEEE VLSI Project 2016 – 2017 ABSTRACT: A duty-cycle correction technique using a novel pulsewidth […]
December 7, 2016
FTEEE1628-High-Efficiency-LLC-Resonant-Converter-With-High-Voltage-Gain-Using-an-Auxiliary-LC-Resonant-Circuit-IEEE-EEE-Project-2016-2017

FTEEE-1628 High-Efficiency LLC Resonant Converter With High Voltage Gain Using an Auxiliary LC Resonant Circuit – IEEE EEE Project 2016 – 2017

FTEEE-1628 High-Efficiency LLC Resonant Converter With High Voltage Gain Using an Auxiliary LC Resonant Circuit – IEEE EEE Project 2016 – 2017 ABSTRACT: To design a LLC […]
December 7, 2016
FTV1644 Full-Swing Local Bitline SRAM Architecture Based on the 22-nm FinFET Technology for Low-Voltage Operation- IEEE VLSI Project 2016 - 2017

FTV1644 Full-Swing Local Bitline SRAM Architecture Based on the 22-nm FinFET Technology for Low-Voltage Operation- IEEE VLSI Project 2016 – 2017

FTV1644 Full-Swing Local Bitline SRAM Architecture Based on the 22-nm FinFET Technology for Low-Voltage Operation-  IEEE VLSI Project 2016 – 2017 ABSTRACT: The previously proposed average-8T […]